收藏本站
Electrical Characteristics (T C  = 25?C unless otherwise specified)
Symbol
V (BR)DSS
Parameter
Drain-Source Breakdown Voltage
Min.
1200
Typ.
Max. Unit
V
Test Conditions
V GS = 0V, I D  = 100μA
Note
V GS(th)
I DSS
I GSS
R DS(on)
g fs
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
2.65
3.2
2.0
2.45
1
10
80
95
7.9
7.4
4
4.8
100
250
0.25
100
120
V
V
μA
μA
m ?
S
V DS = V GS , I D = 1mA
V DS = V GS , I D = 10mA
V DS = V GS , I D = 1mA, T J = 135oC
V DS = V GS , I D = 10mA, T J = 135oC
V DS = 1200V, V GS = 0V
V DS = 1200V, V GS = 0V, T J = 135oC
V GS = 20V, V DS = 0V
V GS = 20V, I D = 20A
V GS = 20V, I D = 20A, T J = 135oC
V DS = 20V, I DS = 20A
V DS = 20V, I DS = 20A, T J = 135oC
Fig. 11
Fig. 3
Fig. 6
C iss
Input Capacitance
1915
V GS = 0V
C oss
C rss
E oss
t d(on)v
t fv
t d(off)v
t rv
R G
Output Capacitance
Reverse Transfer Capacitance
C oss Stored Energy
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
Rise Time
Internal Gate Resistance
120
13
62
13
24
40
38
5
pF
μJ
ns
Ω
V DS = 800V
f = 1MHz
V AC = 25mV
V DD = 800V, V GS = 0/20V
I D = 20A
R G(ext)  = 2.5Ω,  R L  = 40Ω
Timing relative to V DS
f = 1MHz, V AC = 25mV
Fig. 13
Fig. 14
Fig. 17
Built-in SiC Body Diode Characteristics
Symbol
V SD
t rr
Q rr
I rrm
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
3.5
3.1
220
142
2.3
Max.
Unit
V
ns
nC
A
Test Conditions
V GS = -5V, I F =10A, T J = 25oC
V GS = -2V, I F =10A, T J = 25oC
V GS = -5V, I F =20A, T J = 25oC
V R = 800V,
d i F /d t= 100A/μs
Note
Fig. 22
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
R θ JC
Thermal Resistance from Junction to Case
0.44
0.51
R θ CS
R θ JA
Case to Sink, w/ Thermal Compound
Thermal Resistance From Junction to Ambient
0.25
40
K/W
Fig. 7
Gate Charge Characteristics
Symbol
Q gs
Q gd
Q g
Parameter
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Typ.
23.8
43.1
90.8
Max.
Unit
nC
Test Conditions
V DD = 800V, V GS = 0/20V
I D =20A
Per JEDEC24 pg 27
Note
Fig.
12
2
CMF20120D Rev. D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
CMFB3950103FNT THERMISTOR NTC 10K OHM 1% 0805
CMI01S LED T1-3/4 CBI RED RED DIFF
CMMC-8I-DB BOARD DEMO FOR CME8000
CMMR-8P-MF MODULE RCVR CME8000 WO/CPU
CMPA0060002F-TB BOARD DEMO AMP CIRC CMPA0060002
CMS01G LED GRN RECT MODULAR VERT MNT
CMW01Z LED T1 MODULE YELLOW TELLOW DIFF
CN10953_IRIS-M LENS IRIS MEDIUM 30DEG MCE
相关代理商/技术参数
CMF20120D 制造商:Cree 功能描述:N CH SILICON CARBIDE (SiC) POWER MOSFET
CMF20120R00GKEK 功能描述:金属膜电阻器 - 透孔 CMF-20 120 2% T-1 EK e3 RoHS:否 制造商:IRC 电阻:63.4 kOhms 容差:1 % 功率额定值:100 mW 电压额定值:200 V 温度系数:100 PPM / C 端接类型:Axial 工作温度范围: 尺寸:2.3 mm Dia. x 6.4 mm L 封装:Bulk
CMF20120R00JNEA 功能描述:金属膜电阻器 - 透孔 CMF-20 120 5% T-00 EA e3 RoHS:否 制造商:IRC 电阻:63.4 kOhms 容差:1 % 功率额定值:100 mW 电压额定值:200 V 温度系数:100 PPM / C 端接类型:Axial 工作温度范围: 尺寸:2.3 mm Dia. x 6.4 mm L 封装:Bulk
CMF20120R00JNR6 功能描述:金属膜电阻器 - 透孔 1/2watt 120ohms 5% RoHS:否 制造商:IRC 电阻:63.4 kOhms 容差:1 % 功率额定值:100 mW 电压额定值:200 V 温度系数:100 PPM / C 端接类型:Axial 工作温度范围: 尺寸:2.3 mm Dia. x 6.4 mm L 封装:Bulk
CMF20120R00JNRE 功能描述:金属膜电阻器 - 透孔 RoHS:否 制造商:IRC 电阻:63.4 kOhms 容差:1 % 功率额定值:100 mW 电压额定值:200 V 温度系数:100 PPM / C 端接类型:Axial 工作温度范围: 尺寸:2.3 mm Dia. x 6.4 mm L 封装:Bulk
CMF2012F-900-2P-T 制造商: 功能描述:EMKCMF2012F-900-2P-T Common Mode Filter 制造商:undefined 功能描述:EMKCMF2012F-900-2P-T Common Mode Filter
CMF2012H2-900-2P-T 制造商: 功能描述:EMKCMF2012H2-900-2P-T Common Mode Filter 制造商:undefined 功能描述:EMKCMF2012H2-900-2P-T Common Mode Filter
CMF2012H3-900-2P-T 制造商: 功能描述:EMKCMF2012H3-900-2P-T Common Mode Filter 制造商:undefined 功能描述:EMKCMF2012H3-900-2P-T Common Mode Filter